Fabrication and characterization of zinc oxide anti-reflective coating on flexible thin film microcrystalline silicon solar cell

This paper studies the fabrication and characterization of 80 nm zinc oxide anti-reflective coating (ARC) on flexible 1.3 μm thin film microcrystalline silicon (μc-Si) solar cell. High resolution X-ray diffraction (HR-XRD) shows a c-axis oriented ZnO (0 0 2) peak (hexagonal crystal structure) at 34.3° with full width at half maximum (FWHM) of 0.3936°. Atomic force microscope (AFM) measures high surface roughness root-mean-square (RMS) of the layer (50.76 nm) which suggests scattering of the incident light at the front surface of the solar cell. UV–vis spectrophotometer illustrates that ZnO ARC has optical transmittance of more than 80% in the visible and infra-red (IR) regions and corresponds to band gap (E_g) of 3.3 eV as derived from Tauc equation. Inclusion of ZnO ARC successfully suppresses surface reflectance from the cell to 2% (at 600 nm) due to refractive index grading between the Si and the ZnO besides quarter-wavelength (λ/4) destructive interference effect. The reduced reflectance and effective scattering effect of the incident light at the front side of the cell are believed to be the reasons why short-circuit current (I_sc) and efficiency (η) of the cell improve.     

Polycrystalline silicon films prepared by metal-induced crystallisation using pre- and post-deposited aluminium on amorphous silicon

We report on the successful fabrication of polycrystalline silicon films by aluminium-induced crystallisation (AIC) of Radio frequency (rf) plasma-enhanced chemical vapour deposited (PECVD) a-Si films. The effects of annealing at different temperatures (300 and 400°C), below the eutectic temperature of the Si–Al binary system, on the crystallisation process have been studied. This work emphasises the important role of the position of the Al layer with respect to the Si layer on the crystallisation process. The properties of the crystallised films were characterised using X-ray diffraction, Raman spectroscopy, ellipsometry, field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). With an increase in the annealing temperature, it was found that the degree of crystallisation of annealed a-Si/Al and Al/a-Si films increased. The results showed that the arrangement where the Al was on top of the a-Si had a more prominent effect on crystallisation enhancement than when Al was below the a-Si. The interfacial layer between the Al and a-Si film is crucial because it influences the layer-exchange process during annealing. The oxide layer formed between the Al and the a-Si layers greatly retards the crystallisation process in the case of the Al/Si arrangement. Our investigations suggest that polycrystalline Si films formed by AIC can be used as a seed layer in solar cell fabrication.     

Determination of trapping–detrapping events,recombination processes and gap-state parameters by modulated photocurrent measurements on amorphous silicon

Analysis of the out-of-phase modulated photocurrent (MPC) signal, the so-called Y signal, is proposed for determining the trapping–detrapping events, recombination processes and gap-state parameters in amorphous silicon. This is demonstrated by analysing experimental Y spectra obtained on this material from different laboratories including our own. Model simulations are also employed in which the amphoteric nature of the dangling bonds and their distribution according to the defect-pool model are taken into account. From the reconstruction of the Y signal, phase shift and MPC amplitude spectra, several contributions resolved from the frequency dependence of the experimental Y spectra are identified. Two electron trapping–detrapping processes are resolved. These are attributed to hydrogen-related positive defects and to transitions involving the D^+/0 level of the normal dangling bonds from the defect-pool distribution. At lower frequencies a residual contribution is resolved that is attributed to a term related to recombination through the D^+/0 and D^0/? levels. Between 300 and 150?K the above recombination contribution is essentially from the D^0/? and dominates the Y signal at lower frequencies. In this region a characteristic phase lead appears, which is attributed to the existence of safe hole traps in the valence band tail. Around 150?K, trapping–detrapping events in the conduction band tail dominate.     

Application of Autoradiography to the Investigation of New Doping Techniques of Semiconductor Materials

The development of technology of new semiconductor devices requires fundamental studies of a number of phenomena taking place in semiconductors during the doping process or accompanying the doping process.

These studies are concerned with the following problems:

1. Diffusion of gold in silicon and the effect of diffusion layers (particularly phosphorus layers) and epitaxial silicon layers on the distribution of gold in thin silicon plates.

2. Distribution of admixtures in silicon introduced with the aid of the ion implantation technique. Our studies concerned with the second of the above mentioned problems comprised an autoradiographic examination of the homogeneity of the beam of phosphorus ions implanted in silicon, and a study of some apparatus factors and of the purity of the basic material on the implantation.     

Role of weak interface to retain high strength of fiber in monofilamentary SiC fiber/titanium-aluminide composite

The tensile strength of monofilamentary weakly bonded SiC fiber/γ-TiAl intermetallic compound matrix composite, prepared by the sputtering method, was measured and analysed using a fracture mechanical technique. The main results are summarized as follows: (1) The fracture of TiAl occurred prior to that of fiber, resulting in formation of circumferential cracks on the fiber. Interfacial debonding occurred during tensile test, resulting in long pull-out of the fiber. (2) The strength of the fiber in the TiAl matrix was nearly the same as that of the bare fiber. (3) The fracture mechanical analysis showed that (i) the interfacial debonding grows unstably upon initiation and (ii) the stress distribution in the fiber in the cross-section, where the matrix is fractured, approaches to that of bare fiber with increasing debonded length. The reason why the fiber strength was maintained in spite of the formation of cracks on the fiber surface due to the premature fracture of the matrix was accounted for by the fully blunted crack-tip from the above calculation result.     

Interfacial cracking in ceramic laminates

The lamination of composite elements such as sheets or fibres made from ceramic powders represents a cheap and easy way of making tough ceramics. The fabrication and failure behaviour of such layered structures is described. It is shown that crack growth along the interfaces is dominated by dynamic effects due to the storage of excess elastic energy and that effects of loading state, in the silicon carbide/graphite system at least, appear to be relatively unimportant. Crack deflection at interfaces is also discussed and it is shown that observations made in these systems are not consistent with existing theories. Various possibilities are investigated.     

A Silicon Nanowire‐Based Electrochemical Sensor with High Sensitivity and Electrocatalytic Activity

A new kind of silicon nanowire (SiNWs)‐based nanoelectrode assembly, a gold‐nanoparticle‐decorated silicon nanowire array (AuNPs@SiNWsAr), is employed for the construction of high‐performance electrochemical sensors. Significantly, the electrochemical nanosensors are capable of sensitive detection of various electroactive molecules (e.g., dopamine (DA), ascorbic acid (AA), hydrogen peroxide (H₂O₂), and glucose). Further, DA molecules loaded on the surface of AuNPs@SiNWsAr preserve stable high electroactivity overnight without special protection, while free DA molecules may lose their biological activity due to severe oxidization in ambient environment. These findings may offer new opportunities for the design of high‐performance electrochemical nanosensors with high sensitivity and robust stability.